Semiconductor memory module, memory system, circuit, semiconductor device, and DIMM

ABSTRACT

There is the problem that since C/A signals in a DIMM are distributed to respective DRAMs through a register in the DIMM and DQ signals are wired directly from terminals in the DIMM, their timing is difficult to synchronize. The register for speeding up the C/A signals of the DIMM that operates with high speed is provided, and a wiring from the register is set to a daisy-chain wiring. Then, by a timing adjustment circuit provided in the DRAM, a wiring delay time difference between the C/A signals and the clock signals, which are different depending on positions of the DRAMs, is such that the sum of a delay time from the register to each DRAM and a delay amount due to the timing adjustment circuit is made equal to a delay time of the farthest DRAM.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority from Japanese patent applicationNo. JP 2003-428621 filed on Dec. 25, 2003 and No. JP 2004-364743 filedon Dec. 16, 2004, the contents of which are hereby incorporated byreference into this application.

BACKGROUND OF THE INVENTION

The invention relates to a bus connecting technique for connecting aprocessor and functional circuits, which is used in an informationprocessing apparatus, and to components thereof.

As a data rate is enhanced, a time for propagating a wiring betweendevices becomes increasingly equal to a data cycle. In particular, in amemory technique called a DDR (Double Data Rate)-SDRAM, an operatingfrequency of a command signal/address signal (hereinafter abbreviated as“C/A signal”) is half of that of a data signal (hereinafter abbreviatedas “DQ signal”). For example, in currently available products, data hasa transfer rate of 400 Mbps while address has half of the transfer rateof the data, i.e., 200 Mbps.

In an equipment provided with a high-capacity DRAM including a personalcomputer, server, etc., to mount DRAMs with high density in many cases,8 to approximately 18 DRAMs are mounted on one module (DIMM: Dual InlineMemory Module) and then 3 or 4 DIMMs are mounted on a motherboard.

FIG. 2 shows one DIMM 2 that is a conventional technique. In the oneDIMM 2, DRAMs 10-1 to 10-8 operate in synchronization with one another.In a high-speed memory such as a DDR-SDRAM, a C/A signal 51 is driven toeach of the DRAMs 10-1 to 10-8 by a buffer called a register 20. Theregister 20 once takes the C/A signal 51 from a memory controller 3, andredistributes it to multiple DRAMs 10-1 to 10-8 mounted as a C/A signal51A on the DIMM 2.

Thus, in the DIMM 2, to a signal line extending to each DRAM from aterminal for signal of the DIMM 2, a DQ signal 52 is connected at anapproximately one-to-one rate. In contrast, to the C/A signal 51Aextending to each DRAM from the register is connected at anapproximately one-to eighteen rate at maximum. The connection formthereof is achieved by a memory access method in which data of each DRAMis read from and written to the same address in the units of DIMM.

References that disclose a wiring technique for clock signals includePatent Document 1 (U.S. Pat. No. 5,243,703) and Patent Document 2 (U.S.Pat. No. 5,319,755). They disclose the technique for using a foldedwiring as a clock and generating a intermediate phase of the clocks.

In addition, as a reference disclosing a technique for using a reflectedwave of wirings, there is Patent Document 3 (U.S. Patent ApplicationLaid-open No. 2002/018526). This discloses a method of generating areflected wave at a far end serving as an open end.

SUMMARY OF THE INVENTION

As described previously, the wirings of the C/A signals 51A in the DIMM2 are distributed to each of the DRAMs 10-1 to 10-8 through the register20 in the DIMM 2 while the wirings of the DQ signals 52 are directlyconnected to terminals in the DIMM 2 so as to be shorter.

Clock signals 50A are distributed by a PLL (Phased Locked Loop) 30, andare tree-wired so as to have isometric wirings for the purpose ofkeeping timing of each of the DRAMs 10-1 to 10-8 constant. However,wiring efficiency thereof is not so high. This is because one signal canoccupy a number of wiring channels.

Thus, in the conventional DIMM 2, the tree wiring is applied only to theclock signal 50A, but not to the C/A signal 51A. The C/A signal 51Aincludes a number of signals, so that if a tree-wiring structure isapplied to the C/A signal, a wiring area is increased and the DIMM isenlarged and the number of wiring layers on a substrate is alsoincreased. Hence, in the C/A signal 51A, it has been found out that adaisy chain wiring is formed from the register 20. The daisy chain linein this case means that in FIG. 2, a wiring is formed from a near placeof the register 20 to a far place so as to draw a thing in one stroke.In other words, since the respective wiring lengths of the DRAMs 10-1 to10-8 drawn from the register 20 are not equal, timing of the C/A signals51 is different.

When the operating frequency of the C/A signal 51A is late, this doesnot cause any problem. This is because if a time difference of wiringdelay falls within a timing margin, the C/A signal 51A operates.However, as the operating frequency of the C/A signal 51 is increased,the timing margin becomes short and the time difference due to a wiringlength difference cannot be finally permitted. This is fundamentallycaused by the problem that the clock signals 50A and the C/A signals 51Ause different wiring schemes. That is, the clock signals 50A are wiredso as to take the higher-speed data signals 52 well in advance and tohave the same phases as those of the data signals 52 while the C/Asignal 51A gives priority to the wiring density and is wired so as todraw a thing in on stroke.

Namely, a first problem in the conventional technique is as follows.That is, in the C/A signals wired from a near place of the DRAM to a farplace so as to draw a thing in one stroke (wired into a daisy-chainshape) and in the DRAM on a memory module having clock signalsisometrically wired in each of the DRAMS, if the C/A signals 51 are madehigh speed, the time difference of delay of the C/A signals 51 among theDRAMs 10-1 and 10-8 is in some cases longer than the timing marginnecessary to stabilize the operations of the DRAMs.

In addition, a second problem in the conventional technique is asfollows. That is, in the C/A signals wired from a near place of the DRAMto a far place so as to draw a thing in one stroke (wired into adaisy-chain shape) and in the DRAM on a memory module having clocksignals isometrically wired in each of the DRAMS, the C/A signals 51cannot be taken in due to a time difference depending on a wiring lengthdifference between the clock signal 50 and the C/A signal 51.

Hence, in view of these problems, a first object of the presentinvention is to provide a system, in which the timing of data signals,C/A signals, and clock signals is matched so as to permit the wiringlength difference, by means of a method of implementing them at lowercosts and without increasing the wiring density and the number ofsubstrate layers.

Also, a second object of the present invention is to provide a systemfor eliminating the wiring length difference between the C/A signals andthe clock signals and having consistency in the timing of both signals.

As a first means to solve the first problem, a clock timing adjustmentcircuit is provided in the DRAM that adjusts timing of the internalclock signals for taking in the C/A signals.

As a second means to solve the first problem, a C/A signal timingadjustment circuit is provided in the DRAM that adjusts timing of theC/A signals.

As a first means to solve the second problem, in the DIMM, there isprovided a second clock signal wiring, which is wired from the nearerDRAM in a Phase Locked Loop (PLL) circuit to the farther DRAM therein ina daisy-chain shape and which is terminated at the farthest end of thewiring.

As a second means to solve the second problem, the wiring of the clocksignals, which is in the same form of the wiring of the C/A signals, iswired from the Phase Locked Loop (PLL) circuit to the farthest DRAM, andis folded, and then is terminated in the vicinity of the PLL. Withrespect to the clock signals that are the folded wiring, the clocksignal input terminals that the DRAMs have with respect to the wiringbefore the folding and that after the folding are connected atrespective one location. From these two input clock signals, signalshaving a intermediate phase of the two clock signals are generatedwithin the DRAMs, and the internal signals are used for the datasignals.

By using the first means to solve the above first problem, the DRAM issuch that the clock timing adjustment circuit allows the DRAMs to adjustthe clock signal timing by the delay time due to wiring-lenghtdifference between the clock signals and the C/A signals, therebylatching the C/A signals by the clock signals having the adjustedtiming.

Also, by using the second means to solve the first problem, the DRAM issuch that the C/A signal timing adjustment circuit allows the DRAMs toadjust the C/A signal timing by a delay time due to the wiring-lengthdifference between the clock signals and the C/A signals, therebylatching the C/A signals having the adjusted timing by the clocksignals.

By using the first means to solve the second problem, the timedifference between the C/A signals and the second clock signals isalmost eliminated, and the DRAMs can latch the C/A signals by the secondclock signals.

Further, by using the second means to solve the second problem, eachDRAM refers to and takes in the input clock signals provided before thefolding from the PLL. Then, since the delay time of the registerprovided to be distributed to the DRAMs on the DIMMs is incorporatedinto a feedback loop of the PLL, both are cancelled. For this reason,the C/A signals can be taken in by the folded wiring of the PLL.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a view for explaining a memory module according to a firstembodiment of the present invention.

FIG. 2 is a view for explaining a conventional memory module.

FIG. 3 is a view for explaining timing in a first embodiment of thepresent invention.

FIG. 4 is a view for explaining a internal circuit of a DRAM in a firstembodiment of the invention.

FIG. 5 is a view for explaining a motherboard in a first embodiment ofthe present invention.

FIG. 6 is a view for explaining a memory module according to a secondembodiment of the present invention.

FIG. 7 is a view for explaining timing in a second embodiment of thepresent invention.

FIG. 8 is a view for explaining a clock circuit according to a secondembodiment of the present invention.

FIG. 9 is a view for explaining a clock generating circuit that cancelsdelay time of a register in a second embodiment of the invention.

FIG. 10 is a view for explaining a memory module according to a thirdembodiment of the present invention.

FIG. 11 is a view for explaining a memory module according to a fourthembodiment of the present invention.

FIG. 12 is a view for explaining timing of C/A signals in a fourthembodiment of the present invention.

FIG. 13 is a view for explaining a clock switching circuit in a fourthembodiment of the present invention.

FIG. 14 is a view for explaining timing of a clock switching circuit ina fourth embodiment of the present invention.

FIG. 15 is a view for explaining in detail timing in a fourth embodimentof the present invention.

FIG. 16 is a view for explaining a clock-enable wiring in a fourthembodiment of the present invention.

FIG. 17 is a view for explaining a memory module according to a fifthembodiment of the present invention.

FIG. 18A is a view for explaining a relation between a memory locationand a propagation delay time prior to delay in a fifth embodiment of thepresent invention.

FIG. 18B is a view for explaining a relation between a memory locationand a propagation delay time after delay in a fifth embodiment of thepresent invention.

FIG. 19 is a view for explaining a memory module according to a sixthembodiment of the present invention.

FIG. 20A is a view for explaining a relation between a memory locationand a propagation delay time prior to delay in a sixth embodiment of thepresent invention.

FIG. 20B is a view for explaining a relation between a memory locationand a propagation delay time after delay in a sixth embodiment of thepresent invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment

A first embodiment will be described with reference to FIG. 1.

The reference numerals “10-1” to “10-8” denote DRAMs mounted on a DIMM2. In addition to the DRAMs 10-1 to 10-8, the DIMM 2 incorporates a C/Aregister 20 (hereafter abbreviated as “register”) for command/addresssignals and a clock signal stabilizing circuit (hereafter abbreviated as“PLL”) 30.

A memory controller (hereafter abbreviated as “MC”) 3 executes controlof reading and writing of signals to the DRAMs 10-1 to 10-8, and ismounted on a print circuit board (hereafter abbreviated as“motherboard”) 1. To the respective DRAMs 10-1 to 10-8 from the MC 3,terminals on which the DIMM 2 is mounted are connected through wiringson the motherboard 1.

A C/A signal 51 is transmitted from the MC 3 to a register 20 mounted onthe DIMM 2, and connected from the register 20 to each of the DRAMs 10-1to 10-8 on the DIMM 2. The reference numeral “51A” denotes a signalwithin the DIMM 2. In FIG. 1, the register 20 is located in the centerof the aligning DRAMs 10-1 to 10-8, and connected to a C/A signalterminal of each of the DRAMs 10-1 to 10-8.

An output of a PLL 30 is wired to each of the DRAMs 10-1 to 10-8 so asto have the equal length from the PLL 30 and so that the respectiveDRAMs 10-1 to 10-8 can operate in synchronization with one another.Wirings in FIG. 1 are formed in a tree shape and the clock signals 50arrive in phase if being viewed from the PLL 30. Hereinafter, the phaseof the clock signal 50 that has reached the DRAM is called “φ0” (phizero). The clock signal 50 may be supplied from the MC 3 or from anyother components.

Next, timing of DQ signals 52 and C/A signals 51 will be described byusing FIG. 3 for describing a transaction of write data from the MC 3.

The clock signal 50 and the DQ signal 52 outputted from the MC 3 areinputted into the DIMM 2 with a phase interval between them beingmaintained the same. Then, a relation of their phase time differenceremains unchanged even if those phases may be zero or may not be zero.In this case, the phase of each signal is defined as a time differencefrom a rising or falling state of the clock signal 50 to a state of eachsignal.

The clock signals 50 are inputted into the PLL 30 and reach therespective DRAMs as the clock signals 50A, and the DQ signals 52 reachthe respective DRAMs from the terminals of the DIMM 2 after a delay timedue to wirings disposed on the DRAMs. The DQ signal having a propagationdelay time from the MC to each DRAM is given by:Td=Td1+Td2  (1)where “Td1” is a wiring delay time on the motherboard 1 and equal-lengthwirings are adopted so as to have the same length with respect to allthe DQ signals. “Td2” is a line delay time from an electrode of the DIMMto the terminal of each DRAM, and also the equal-length wiring isadopted from the electrode to the terminal. Therefore, there is no skewgreater than design and manufacture fluctuations among the DQ signals52.

Next, the propagation delay time TC/A(i) of the C/A signals 51 from theMC to each DRAM is given by:TC/A(i)=Ta1+Ta2+Treg+Ta3(i)  (2)where “Ta1” is a wiring delay time of the C/A signals 51 on themotherboard 1 and equal-length wirings are adopted so as to have thesame length from the MC 3 to the DIMM 2 with respect to all the C/Asignals 51. “Ta2” is a delay time from the electrode of the DIMM 2 tothe terminal of the register 20, and the equal-length wirings aresimilarly adopted so as to have the same length from the electrode tothe terminal. “Treg” is a delay time from an input of the register 20 toan output thereof. Therefore, “Ta3(i)” means the wiring delay time ofthe C/A signals 51A to an i-th DRAM from the register 20.

By using the above expressions (1) and (2), the time difference (phasedifference) between times when the DQ signals 52 and the C/A signals 51outputted from the MC 3 reach each of the DRAMs 10-1 to 10-8 can becalculated by the following expression:TC/A(i)−Td=Treg+Ta3(i)  (3)where it is assumed that the DQ signals 52 and the C/A signals 51 on themotherboard are wired to have the equal delay time. This is representedby the expressions:Td1=Ta1  (4)Td2=Ta2  (5)

The expression (3) shows that, in addition to the fixed delay time ofthe register 20 (Treg), a phase difference corresponding to the wiringlength of the Ta3(i) is generated. In the case of the wirings as shownin FIG. 1, the phase delay time difference is such that the maximum gapof “Ta3(4)−Ta3(1)” occurs among the DRAMs 10-1 to 10-8 and if aninterval between the DRAM 10-1 and the DRAM 10-8 is “δL=50 mm”, theexpressionδT=δL/Vp  (6)is used to obtain “δT=833 ps”. In this case, the propagation delay speed(Vp) is set at 60 mm/ns because delay is generated due to inputtedcapacity components.

In the case of the DRAM in a DDR-SDRAM method, the C/A signals 51operate at a half of the DQ signals 52. When the DQ signals 52 operateat 1.6 Gpbs, the C/A signals 52 operate at 0.8 Gbps. In such a case,time width of the C/A signals 51 is 1250 ps. In contrast, the above δTcorresponds to 66% thereof, thus exceeding the half. In order toaccurately take the C/A signals 51A in the DRAM, they are preferablytaken at the time position which is at the half of time width of the C/Asignals 51A because timing margins thereof are wider. However, the aboveδT exceeds the half of the time width. Therefore, taking the data hasbeen unstable. Hence, in this embodiment, as shown in FIG. 3, the C/Asignals are taken in each DRAM by using delay time elements.

A method of implementing this will be described with reference to FIG.4.

The clock signals 50A generates a phase φ0 synchronized in phase withthe clock signals 50A by using a clock adjustment circuit (PLL) 61provided in the DRAM 10. The reference numeral “62” denotes a variabledelay circuit, as well as a delay circuit that generates a phase φ1having a constant phase difference with respect to an input of the clocksignal phase φ0. Quantitative Setting of a delay amount (D) of thevariable delay circuit 62 is given by the following expression:D=MOD (Treg+Ta3(i)+½Tcycle, Tcycle)  (7)where “Tcycle” is a cycle of the C/A signal and “MOD” is a remainderfunction. The expression (7) gives a remainder of a second term Tcycleto a first term in the MOD function. Therefore, it is understood that,by the phase φ1 having the delay amount (D) in the delay circuit 62, theC/A signal 51A is latched by a flip flop (hereafter abbreviated as “FF”)71 and the DRAM 10 can incorporate the C/A signals. To the contrary, itis understood that even if the variable delay circuit is provided to theC/A signals and a phase difference between the phases φ0 of the C/Asignals and the clock signals is set as the delay amount (D), the DRAM10 can incorporate the C/A signals.

Here, the delay amount (D) may be determined by calculating theexpression (6) using the wiring-length difference or by actualmeasurement.

The DIMM 2 mounts the DRAMs 10-1 to 10-8 and is shipped after passing aninspection. Thus, a manufacturer that ships the DIMM 2 has informationon how much each of the DRAMs 10-1 to 10-8 is delayed on the DIMM 2. Theinformation amount needs only to be written in the DRAMs 10-1 to 10-8before shipment.

The write of the information (D) needs only to be held by a register 63provided in the DRAM 10. In order to write data into the register 63,the data is stored in a storage element other than the DRAM provided onthe DIMM, and may be written into the register 10 in the DRAM 63 throughan interface for boundary scan testing such as JTAG 55. Thereby,separate pins for writing become unnecessary.

The “JTAG” herein is a standard method of the boundary scan testing,which is one of methods of inspecting IC chips, and is a name of anindustry group that has defined the standards. The JTAG standards havebeen standardized by the Institute of Electrical and ElectronicsEngineers (IEEE) in 1990 as IEEE std. 1149.1-1990 “Standard Test AccessPort and Boundary-SC/An Architecture”.

Here, as another embodiment, there is also a method of forming, into atree-shaped structure similar to that of the clock signals 50A, the C/Asignals 51A in the DIMM 2 and wiring them on the respective DRAMs 10-1to 10-8 so as to have the same timing. In such a case, although thephase adjustment delay circuit as shown in FIG. 4 becomes unnecessary,the C/A signals in the DIMM 2 have approximately 20 bits. Therefore, ifwirings are formed into a tree shape, an area occupied by the wirings islarger and the size of the circuit board in the DIMM 2 or the number oflayers of the circuit board becomes necessary more, whereby low coststhereof cannot be achieved.

In contrast, the present embodiment has the effect of making small thearea occupied by the wirings and reducing the manufacturing costs of thecircuit boards by linearly wiring the C/A signals from the register 20to the respective DRAMs 10-1 to 10-8.

In addition, in FIG. 1, if the MC 3 in FIG. 1 outputs the DQ signals 52and C/A signals 51 in synchronization with the clock signals 50, theclock signals 50A and the DQ signals 52 can simultaneously reach each ofthe DRAMs 10-1 to 10-8. This is because, by using the basic function ofthe PLL 30, the clock signals can apparently be distributed without anydelay.

When seen from the MC 3, this point means that the C/A signals 51 withrespect to all the DRAMs 10-1 to 10-8 is written to the farthest DRAM10-4 from the register 20 irrespective of different locations and/orwiring lengths. As described earlier, this is executed since the delayfunction operates so that the phase adjustment delay circuits 62 in theDRAMs 10-1 to 10-8 cancel the wiring-length difference. This delay iswritten by using the boundary scan signals. Therefore, the DIMM 2 can beconstructed by only one type of DRAM even if the DRAM has two or morethan delay time amounts.

Next, with reference to FIG. 5, mounting of the motherboard in the firstembodiment will be shown. This embodiment also has the same effect asthose of memory modules of a second and third embodiments describedlater.

FIG. 5 is a top plan of the motherboard 1, wherein the DQ signals 52drawn from the MC 3 and the C/A signals 51 are bus-connected torespective terminals of the DIMMs 2-1 to 2-4. Then, registers 20-1 to20-4 are respectively mounted on respective DIMMs 2-1 to 2-4, and arewired to the DRAMs incorporated in the respective DIMMs 2-1 to 2-4, asshown in FIG. 1. Thus, with respect to the DIMM 2-1, the timing of readoperation/write operation from/to the farthest DRAM in the same DIMM 2-1is specified for the register 20-1.

Similarly, also with respect to the DIMMs 2-2 to 2-4, the timing to thefarthest DRAM in said DIMM is specified. Thus, when seen from the MC 3,the DIMMs 2-1 to 2-4 differ only in the delay time of the wiringsdisposed on the motherboard 1. That is, there is the effect that designthereof is easily achieved by considering only the wiring delay time dueto a difference among the DRAM positions in the access timing to eachDRAM in each of the DIMMs 2-1 to 2-4.

The wirings of the DQ signals 52 and the C/A signals 51 may be formedusing a crosstalk technique or using a wiring technique called STL (StubSeries Termination Logic) or using combination of both. The importantpoint is that both of the DQ signals and the C/A signals can reach eachDRAM within an equal time period when seen from the MC 3. As long as anyinterface satisfies this condition, it can essentially have almost thesame effect as that of this embodiment.

Similarly, in the inspection of the DIMM, since all of the DQ signals 52and the C/A signals 51 are specified to the clock signals 50, there isthe effect that the inspection by the tester can be easily made. If theDRAMs have different timing depending on a place on which the DIMM 2 ismounted, the inspection by the tester needs to adjust the timing perDRAM and, thus, many test vectors for inspection must be preparedaccordingly. In addition, since a long time is required for theinspection, production efficiency thereof is reduced. However, in thiscase, there is also the effect of avoiding such drawbacks.

As described above, according to the present embodiment, since the C/Asignals are linearly wired from the register 20 to each of the DRAMs10-1 to 10-8, there are the effects of reducing the areas occupied bythe wirings and lowering the costs of the circuit board.

In addition, if the signals are linearly wired as described above, thephase difference between the C/A signals and the data signals is shownby the expression (3). However, even in such a case, since the phasedifference between the C/A signals and the data signals can beeliminated by delaying the C/A signals, the C/A signals can be taken in.Consequently, it is possible to access all of the DRAMs in the DIMM withthe same timing, so that there is the effect that the testing of theDRAMs as well as timing design of the memory system can be easily made.

Second Embodiment

With reference to FIG. 6 a second embodiment will be described.

The present embodiment is characterized in that the same line is usedfor a clock for receiving the C/A signals and for a clock distributed toeach DRAM.

On the DIMM 2, the DRAMs 10-1 to 10-8, the register 20, and the PLL 30are mounted. The register 20 and the PLL 30 are located at an end of theDIMM 2. Then, C/A signals 51B in the DIMM 2 are wired into a daisy-chainshape. Also for clock signals 50B, a folded wiring from the PLL 30 isused, and clock-input terminals of the DRAMs 10-1 to 10-8 arerespectively connected to the wiring before folding and that afterfolding. In addition, as a far end of the wiring of the clock signals50B is a matching end, there is no reflection at this part.

In order to adopt this configuration, two clock signals having adifferent phase in accordance with a wiring-length difference areinputted to the DRAMs 10-1 to 10-8. If terminals are denoted by thereference numerals “1C, 2C, 3C, . . . , 8C” for convenience in shortorder of signal arrival times when the signals from the PLL 30 arrive toeach of the DRAMs 10-1 to 10-8, one pulse as shown in FIG. 7 reach therespective terminals. The horizontal axis of FIG. 7 indicates time andillustrates propagation of a single pulse.

In the DRAM 10-1, the fastest pulse is inputted to the terminal 1C andthe slowest pulse is inputted to the terminal 8C. Similarly, in the DRAM10-2, the second fastest pulse is inputted to the terminal 2C and thesecond slowest pulse is inputted to the terminal 7C. The phasedifference among these pulses depends on the wiring-length difference ofthe clock signals 50B. The difference is the same delay time differencewhen seen from the folding point, and the clock signals arrive earlierat the terminals 1C to 4C and arrive later at the terminals 5C to 8C.Thus, the intermediate time of the time difference between the twopulses to be inputted from the two clock terminals of the DRAM is equalto an arrival time of the pulse in the folded portion. The phase of theclock signals 50B at this folded portion will be represented as “φ0”.

By the circuit shown in FIG. 8, the DRAMs 10-1 to 10-4 generate clocks,each of which has a phase of clock φ0. In FIG. 8, the reference numerals“61” and “62” denote input terminals for clock, and the clock signalshaving the phase difference are inputted. The reference numerals “81”and “82” denote variable delay circuits and each of them has the samedelay time. The reference numeral “83” denotes a phase comparator thatdetermines which of two inputs has a fast or slow phase and that feedsback the control signals to the delay circuits 81 and 82 in accordancewith the determination result.

By adopting the above-mentioned configuration, a time obtained by addingthe delay circuits 81 and 82 is equal to a time difference that is thephase difference between the input terminals 61 and 62. Then, since thedelay times of the delay circuits 81 and 82 is the same, a phase of φ0has half of the delay time. That is, this means that there can begenerated the clock φ0 suitable for the half time of the phasedifference between the clocks inputted to the input terminals 61 and 62and thereby the same clock as that of the phase of φ0 in FIG. 4 isgiven.

The clock signals 50 inputted to the DIMM 2 are distributed to each ofthe DRAMs 10-1 to 10-8 to have the same delay time as that of theregister 20. This is achieved by using a configuration shown in FIG. 9.At the register 20 on the DIMM 2, the C/A signals 51 are converted intothe C/A signals 51B that are in phases. However, the PLL 30 is convertedinto the clock signal 50B so that the delay time Treg, which theregister 20 has, can be cancelled. In other words, the PLL 30 operatesso that both phases become equal to each other, but one of these twoinputs is connected to the input clock signals 50 and the other input isinputted to the signal of the output 50B of the PLL 30 that has the samedelay as “Treg”.

At this time, the delay of “Treg” can be obtained by making the clocksignals 50B pass through the internal circuit of the register 20. Apassage time through the register 20 has the same value as that of thedelay time from the C/A signals 51 of the register 20 to the C/A signals51B. According to this configuration, since the delay time (Treg) of theregister 20 that varies depending on process fluctuations and/orvariation in temperatures or voltages can be changed with the samefluctuation margin, the configuration can easily adapt to thesevariations. Note that, in FIG. 9, although the register 20 and the PLL30 are configured in respective separated circuits, they may beconfigured in the same circuit.

In addition, although the C/A signals 51 in the register 20 aresynchronized with the clock by the latch circuit provided in theregister 20, it is unnecessary to provide the latch circuit if thevariations are permitted by the system. In this case, since there is nofunctional distinction between the path for clock delay and the path forthe C/A signals 51, the register 20 may simply be a bus buffer.

As shown in FIG. 9, when the clock signal 50 is controlled, the clockphases of the DRAMs 10-1 to 10-8 in FIG. 6 are all equal to the timewhen the C/A signals 51B arrive at the farthest DRAM 10-8 with respectto the register 20. For this reason, since all the DRAMs 10-1 to 10-8can be set so as to operate in phase in the DIMM 2, the timing can bespecified by the terminals of the DIMM similarly to the firstembodiment. Thereby, this configuration has the effect of designabilityand testability.

By wiring the clock signals 50B as shown in FIG. 6 and using thecircuits as shown in FIGS. 8 and 9, a common clock φ0 can be generatedin the DRAMs 10-1 to 10-4 without the tree-shaped wirings. Also, in FIG.8, although the clock signal having a fast phase (φ1) is inputted to theterminal 61, this phase is identical to the signal delay time of the C/Asignal 51B from the register 20. This is because the wiring length fromthe register 20 to each of the DRAMs 10-1 to 10-4 is almost the same asthe wiring length from the PLL 30 to said DRAMs 10-1 to 10-4.Consequently, use of the clock signals inputted to the terminal 61 makesit possible to take in the C/A signals 51B because the delay time fromthe same register 20 and PLL 30 to each of the DRAMs 10-1 to 10-8 isequal.

The present embodiment has the following differences and effects incomparison with the conventional Patent Documents 1 and 2. Anintermediate phase is generated from the two phase differences by usingthe folded wiring in the conventional technique. However, further in thepresent embodiment, adjustment is made to match the timing phase of theclock signals 50B with the C/A signals 51B by using feedback of the PLL30 of the DIMM 2, as shown in FIG. 6. Thereby, this configuration hasthe effect that the variations of the delay “Treg” of the register 20can be absorbed by the circuit shown in FIG. 9.

By adoption such a configuration, it is possible to generate the commonclock φ0, without using the delay time φ1 by the delay circuit in theDRAM of FIG. 3 shown in the first embodiment. Thus, the delay circuits62, the register 63, and the write circuit using the boundary scan,which are shown in FIG. 4, become unnecessary. Consequently, since thecircuits can be simplified and the chips can be reduced in size, thecosts can be reduced. Also, since the area occupied by the wirings onthe DIMM of the clock is reduced, the area of the DIMM can also be madesmall and the lower costs can be achieved.

Third Embodiment

A third embodiment will be described with reference to FIG. 10.

The present invention is an example in which the clock signals 50B inthe second embodiment are constituted by a directional coupler. FIG. 10shows only the clock signals and the C/A signals, and other signals arethe same as those in the second embodiment. In this embodiment, theclock signals are denoted by the reference numeral “50C”. In addition,although four DRAMs is used to simply describe this embodiment, the sameeffects can be achieved irrespective of whether the number of the DRAMsis smaller or greater. One wiring for the clock signals 50 is drawn fromthe PLL in (register+PLL) 21, and a far end of the above wiring is anopen end. Thus, the clock signals 50C outputted from the PLL are totallyreflected at the far end. The totally reflected pulses are absorbed bythe termination resistor provided in the PLL and are not reflectedagain.

By using, as a primary coupling wiring, the wiring of the clock signals50C drawn from the PLL 20, secondary coupling wirings 81 to 84 are wiredto the DRAMs 10-1 to 10-4 so as to form a directional coupler. Thesecondary coupling wiring 82 is shared by and connected to the DRAMs10-1 and 10-2. Input impedance of the clock signals 50C of the DRAMs10-1 to 10-4 matches characteristic impedance of wiring, and the aboveclock signals are not reflected at the respective terminals thereof. TheDRAM 10-1 is connected to one end of the secondary coupling wiring 81,and the other end of the secondary coupling wiring 81 has a matching endby the resistor 200. In addition, two ends of the DRAM 10-4 areconnected to one end of the secondary coupling wiring 84.

The secondary coupling wirings 81 to 84 constituting a directionalcoupler generate crosstalk signals backward with respect to pulsesrunning on the wiring of the clock signals 50C that are the primarycoupling wiring. In this case, the term “backward” means such adirection as to proceed in an opposite direction to a propagatingdirection of the pulses on the primary coupling wiring. Thus, in theclock signals 50C outputted from the PLL, the backward crosstalk signalsare inputted to the respective terminals in order of 1 to 8 surroundingthe clock signals 50C in FIG. 10.

Although the signal pulses outputted from the PLL 20 first pass throughthe wiring of the clock signals 50C coupled to the secondary couplingwiring 81, backward crosstalk is generated in this directional coupler.This only propagates to the termination resistor 200, and has noinfluence on an operation of the DRAM 10-1.

Next, the pulses of the clock signals 50C outputted from the PLL 20 passthrough a wiring portion coupled to the secondary coupling wiring 82.Then, the backward crosstalk generated by the terminal 1C connected tothe DRAM 10-1 is inputted to the secondary coupling wiring 82. Since theinput impedance of the terminal 1C of this DRAM 10-1 has the matchingend within the DRAMs, it is equal to the wiring impedance and is notreflected at this portion. Consequently, no pulse is then transmitted tothe DRAM 10-2 connected to the wiring 82.

Similarly, the pulses that proceed on the wiring of the clock signals50C apply the generated backward crosstalk to a terminal 2C of the DRAM10-2 with respect to the secondary coupling wiring 83. Further, thepulses of the clock signals 50C first apply the backward crosstalk to aterminal 3C of the DRAM 10-3 with respect to the secondary couplingwiring 84. The pulses proceeding on the wiring of the clock signals 50Care totally reflected since the far end is an open end, and so theychange the direction of movement. Although the reflection pulseproceeding in the right generates the backward crosstalk at thesecondary coupling wiring 84, the pulses are inputted almostsimultaneously to terminals 4C and 5C of the DRAM 10-4. Consequently,the pulses are incident on the two terminals in the DRAM 10-4 at thesame time. This is equal to the phase of the clock signal φ0 of thefolded portion of FIG. 6 in the second embodiment.

Although the pulses of the clock signals 50C reflect at a far end andproceeds toward the PLL, the input pulses are inputted to: a terminal 6Cconnected to the secondary coupling wiring 83; a terminal 8C connectedto the directional coupler 82; and lastly the terminal 8C connected tothe secondary coupling wiring 81. In addition, reflected waves returnedto the PLL are absorbed by the termination resistor in the PLL and thusare not reflected at the termination resistor.

By absorbing such a configuration, the same effects as those of thesecond Embodiment can be obtained. In other words, the clock signals 50is inputted to each of the DRAMs 10-1 to 10-8 through the directioncoupler, as shown in FIG. 6. Then, the phase φ0 of the common time canbe generated by generating an intermediate phase of the clock signalsinputted to the two terminals.

Similarly, the C/A signals 51C outputted from the resistor in(register+PLL) 21 are wired into the same shape as those of the clocksignals 50C. That is, one wiring whose far end is open is drawn from theterminated drivers, and the wiring constitutes the directional couplerand each of the DRAMs 10-1 to 10-4. The clock signals 50C are differentfrom the C/A signal 51C in the secondary coupling wiring, and thesecondary coupling wirings are simply wired between the DRAMs 10-1 and10-2 and between the DRAMs 10-3 and 10-4. These terminals will be called“1A”, “7A”, “3A”, and “5A” hereinafter. The numbers thereof aredescribed in the same order as those of the clock signals 50C.

In other words, since the signal pulse timing of the C/A signals 51C isthe same as that of the clock signals 50C. Thus, the C/A signals 51Cinputted to each of the DRAMs 10-1 to 10-4 are the same as the clocksignals 50C, and the pulses are inputted to: the terminal 1A with thesame timing as that of the terminal 1C of the DRAM 10-1; next theterminal 3A with the same timing as that of the terminal 3C of the DRAM10-3; further the terminal 5A with the same timing as that of theterminal 5C of the DRAM 10-4; and finally the terminal 7A with the sametiming as that of the terminal 7C of the DRAM 10-2. Since the C/Asignals 51C and the clock signals 50C are formed into the same wiringshape, the clock signals 50C can be used as a clock to take in the C/Asignals 51C. By this configuration, the same effects as those of thesecond embodiment can be achieved. By this embodiment, since therespective wirings of the clock signals 51C and the C/A signals 51C canbe simplified, there is the effect of realizing lower prices.

As described above, by applying the directional coupler and thereflected waves to the clock signals, the present embodiment can obtaintwo effects of reproducing the clock signals having the same phase andapplying the reflected waves to a source clock for latching the C/Asignals. Thereby, it is possible to provide simple structures at lowprice and perform high-speed operations.

Fourth Embodiment

A fourth embodiment of the present invention will be described withreference to FIGS. 11, 12, 13, 14, 15 and 16. Hereinafter, in somecases, respective terminals and/or signals and/or wirings are denoted bythe same reference number, and further respective abbreviations ofterminals and/or signals and/or wirings are denoted by the samereference numerals in some cases. (This will be applied also to a fifthand sixth embodiments).

FIG. 11 is a block diagram of a memory module 1100 of a fourthembodiment according to the present invention. Now, the memory module1100 is a so-called “DIMM having two rank configuration inwhich×eighteen units of eight DRAMs are incorporated”, wherein DRAMs 1to 9 (1101), DRAMs 1B to 9B (1102), a register 1103, and a PLL 1104 areincorporated.

The ranks are divided into rank 1 including the DRAMs 1 to 9 and rank 2including the DRAMs 1B to 9B. Here, the DRAMs 1B to 9B are those locatedon the back of the DRAMs 1 to 9, respectively. In a DRAM pair located onthe front and back, for example, the DRAMs 1 and 1B that have the samefunctions, a data signal terminal, a command/address (C/A) signalterminal, and a clock signal terminal are electrically connected andshare wirings. However, control signal terminals that become necessaryper rank, such as chip selection signals (chip select) or clock-enablesignals (clock enable), is excluded.

The data (DQ) signals 52 are connected to a data signal wiring groupfrom the memory controller 3 on the motherboard to each DRAM on thememory module. All wirings of this data signal wiring group have thesame length, and all data signals are outputted from the memorycontroller 3 with the same timing, and arrive at each DRAM with the sametiming.

The C/A signals 51 are first transmitted from the memory controller 3 tothe register 1103 on the memory module 1100 through a C/A wiring group.Then, from the register 1103, the C/A signals C/A_DC (also written as“C/A_DC signal” or “C/A_DC”) are connected to the DRAMs 1 to DRAM 5 andthe DRAMs 1B to 15B on the left side of the memory module by a daisychain wiring 1105. Similarly, they are also connected to the DRAMs 6 to9 and the DRAMs 6B to 9B on the right side of the memory module by adaisy chain wiring.

The clock signals 50 are first transmitted to the PLL 1104 on the memorymodule 1100 through a clock wiring. Then, they are separately wired oneby one from a PLL 1104 to the DRAMs 1 to 9 and the register 1103 througha clock signal wiring group 1106 having the same length. Note that theDRAMs 1B to 9B share signals with the DRAMs 1 to 9, respectively. Inaddition, another clock signal CLK_DC (also written as “CLK_DC signal”and “CLK_DC”), which is different from the clock signal wiring group1106, is connected through a daisy chain wiring 1107 to the DRAMs 1 to 5and the DRAMs 1B to 5B on the left side of the memory module. Similarly,they are also connected through a daisy chain wiring to the DRAMs 6 to 9and the DRAMs 6B to 9B on the right side of the memory module. Note thatlengths of the C/A_DC signal wiring 1105 and CLK_DC signal wiring 1107are adjusted so that the delay time of the C/A_DC signals is equal tothat of the CLK_DC signals, and thus a rising edge of the CLK_DC signalsis synchronized with the timing of taking in the C/A_DC signals. Inaddition, such daisy chain wiring is terminated with an appropriatesource voltage such as a ground level or half of the source voltage, atthe termination resistor such as effective characteristic impedance ofthe signal wiring, in opposite ends of the register 1103 and the PLL1104.

Line lengths of a wiring group of the data signals 52, a wiring group ofthe C/A signals 51, and a wiring length of the clock signals 50 aredesigned so that the timing of the clock signals to be inputted to thePLL 1104, the timing of being inputted by the clock signal wiring group1106 into each DRAM and the register 1103, and the timing of taking inthe data signals by each DRAM become equal. The timing is referred to as“cycle timing φ0” of the memory system.

Now, since the C/A signals C/A_DC and the clock signals CLK_DC areconnected to each DRAM by the daisy chain wiring, the arrival time ofthe signals to each DRAM differs. In particular, the clock signal CLK_DCin each DRAM differs from the above-mentioned cycle timing φ0. Thus, ineach DRAM, there is mounted a clock switching circuit 1300 (FIG. 13) forchanging the timing so that the C/A_D signals to be taken in by theclock signals CLK_DC can be taken in by the cycle timing φ0.

FIG. 16 is a block diagram showing connection of the clock-enablesignals in this embodiment. The clock-enable signals are ones forenabling the clock in each DRAM. On the motherboard, the clock-enablesignals 1601 are connected to the register 1103 from the memorycontroller 3, similar to the C/A signals 51. In addition, on the memorymodule, a first clock-enable signal 1602 is connected to each of theDRAMs by a daisy chain wiring, and the wiring length of this signal 1602is designed so that the signal has the same delay time as that of theclock signal CLK_DC line 1107 in each DRAM. In addition, on the memorymodule, a second clock-enable signal 1603 is connected from the register1103 to every DRAM group of the same rank by a tree-shaped wiring, andthe line length is designed so that the signals can simultaneouslyarrive at each connected DRAM. In Figure, solid lines 1601 to 1603 areused for the rank 1 and dotted lines are used for the rank 2. the reasonthat this embodiment has two systems of such clock-enable signals willbe described later. Note that chip select signal wirings may only be thesame daisy chain wiring as that of the C/A signals for every DRAM groupof the same rank.

FIG. 12 is a timing chart that schematically shows the timing oftransmission of the C/A signals associated with the register 1103 of thememory module 1100, the DRAM 1 (1101), and the DRAM 5 (1102).

In FIG. 12, the reference numerals “T0” to “T4” denote time of the cycletiming φ0. First, at T0, the register 1103 outputs the C/A signal(1201). The clock signal CLK_DC is transmitted with a timing of “1202”and the C/A signal C/A_DC is transmitted with a timing of “1203”. Now,the C/A signal C/A_DC arrives from T0 with a delay time of “td1”. At thefarthest DRAM 5 (1102) from the register 1103, the clock signal CLK_DCis transmitted with a timing of “1205” and the C/A signal C/A_DC istransmitted with a timing of “1206”. Here, the C/A signal C/A_DC arrivesfrom “T0” with a delay time of “td5”.

When the transfer frequency (data rate) of the C/A signal is high andcomplies with “td1<tck<td5” (“tck” is a cycle time), the C/A_DC signalcannot be taken in with “T1” in the DRAM 1 (1101) but cannot be taken inwith “T1” in the DRAM 5 (1102). Thus, the above signal has to be takenin with “T2”. As a result, the clock switching circuit 1300 (See FIG.13) in each DRAM is used to reduce the transfer frequency of the C/A_DCsignal, thus allowing the C/A_DC signal to be taken in at common time ineach DRAM.

First, in the DRAM 1 (1101), the C/A_DC signal is taken in by the clocksignal CLK_DC, and then the clock switching circuit 1300 (FIG. 13)generates a C/A_DC_2T (1204) that is obtained by halving the transferfrequency of the C/A_DC signal, i.e., doubling the data window.Similarly, even in the DRAM 5 (1102), the C/A_DC signal is taken in bythe clock signal CLK_DC, and then the clock switching circuit 1300 (FIG.13) generates the C/A_DC_2T (1207) by halving the transfer frequency ofthe C/A_DC signal, i.e., doubling the data window. Then, the C/A_DC_2T(1204) in the DRAM 1 (1101) and the C/A_DC_2T (1207) in the DRAM 5 canbe taken in at a common time T2.

FIG. 13 is a block diagram of the above-mentioned clock switchingcircuit 1300 mounted on the DRAM.

This clock switching circuit has: a C/A_DC signal-input terminal 1312; aCLK_DC signal-input terminal 1311; a cycle-timing clock CLK signal-inputterminal 1313; and a signal C/A_IN0 signal-output terminal 1310 for DRAMinternal C/A. The interior of the clock switching circuit comprise atwo-divider 1303 of a rising edge standard, a D flip flop 1301 of arising edge standard, a D flip flop 1302 of a falling edge standard, atwo-input one-output selector 1305, and a two-divider 1304 of a fallingedge standard.

The CLK_DC signal-input terminal 1311 is connected to the input of thetwo-divider 1303 of a rising edge standard, and an output signalCLK_DC_2R (1306) is given to the clock input terminals of the D flipflop 1301 of a rising edge standard and the D flip flop 1302 of afalling edge standard. In addition, a C/A_DC signal terminal 1312 isgiven to the data signal-input terminals of the D flip flop 1301 of arising edge standard and the D flip flop 1302 of a falling edgestandard. The output signal C/A_DC_2T (1307) of the D flip flop 1301 ofa rising edge standard and the output.signal C/A_DC_2B (1308) of the Dflip flop 1302 of a falling edge standard are given to the input signalterminals of the selector 1305. Meanwhile, the cycle-timing clock CLKsignal-input terminal 1313 is given to the input terminal of thetwo-divider 1304 of a falling edge standard, and its output signalCLK_2F (1309) is given to the selection signal terminal of the selector1305. Then, the output signal of the selector 1305 is outputted to theC/A_IN0 signal-output terminal 1310 of the clock switching circuit 1300.

Note that the C/A_IN0 signal of the output terminal 1310 of this clockswitching circuit is inputted to the flip flop 1316 that takes in theC/A signal with the cycle timing φ0.

Next, the principle of an operation of this clock switching circuit 1300will be described. FIG. 14 is a schematic timing chart in a circuit,which indicates the principle of the clock switching circuit.

The C/A_DC signal 1312 and the CLK_DK signal 1311 on the memory module(DIMM) are transmitted to each DRAM by a daisy chain wiring that runstogether to either a right end or left end from the vicinity of themidpoint of the memory module, so that a phase relationship between theboth signals in each DRAM is almost equal, as shown in FIG. 14.

First, the clock switching circuit 1300 of each DRAM takes in the C/A_DCsignal 1312 with the timing of the CLK_DC signal 1311. Then, itserial/parallel-converts the C/A_DC signals, and converts one C/A_DCsignal into two signals, namely, the signals C/A_DC_2T (1307) andC/A_DC_2B (1308) that are obtained by halving the transfer frequency.

Then, after parallel/serial-converting the C/A_DC_2T (1307) and theC/A_DC_2B (1308), there is re-synthesized the “C/A signal=C/A_IN0(1310)” that can be taken in with the cycle timing φ0 common torespective DRAMs, and there is obtained the C/A signal C/A_IN (1314)synchronized with the timing φ0 by the flip flop 1316 for taking in theC/A signal.

Based on the above description, an operation of this clock switchingcircuit 1300 will be described. FIG. 15 is a detailed timing chart ofthe clock switching circuit.

In the clock switching circuit 1300, first, the two-dividing clockCLK_DC_2R (1306) is generated from the CLK_DC (1311: first clock). Then,in the D flip flop 1301 of a rising edge standard, the C/A_DC (1312:first signal) is taken in by the rising edge of the two-dividing clockCLK_DC_2R (1306), whereby the C/A_DC_2T (1307) is generated. Inaddition, similarly, the C/A_DC_2B (1308) takes in and generates theC/A_DC signal 1312 by the two-dividing clock CLK_DC_2R (1306) in the Dflip flop 1302 of a falling edge standard.

Next, from the clock signal CLK (1313) at the cycle timing φ0, thetwo-dividing clock CLK_2F (1309: dividing clock of second clock) of afalling edge standard is generated by the two-divider 1304 and given tothe selector 1305. Thereby, the selection signals are alternatelyswitched and outputted at a falling edge of “φ0”. Thus, the C/A_DC_2T(1307) at “T2”, “T4”, “T6” that are the rising edges of “φ0”, and theC/A_DC_2B (1308) at “T3”, “T5”, . . . , are set up in the C/A_IN0(1310). Note that the two-divider in the circuit is reset with thetiming of the clock-enable signals that correspond to the associatedclocks. Since the clock-enable signals 1601 are simultaneously inputtedto the respective DRAMs, initialization timing of the two- divider 1304becomes equal in each of the DRAMs and the CLK_2F (1309) becomes equalin each DRAM.

Then, the C/A_IN0 (1310) is inputted to the flip flop 1316 that takes inthe C/A signal at the cycle timing φ0, and thus the C/A signal C/A_IN(1314) synchronized with the timing φ0 can be obtained.

Thus, the C/A signal can be switched from the clock signal CLK_DC (1311)to the cycle timing φ0, i.e., the clock signal 1106 (second clock).

In addition, in the above description, an example of parallelism 2 byassuming that the “td1<tck<td5<2tck” is formed has been described.However, the parallelism may be changed depending on any condition. Inthe case of the “(N−1)×tck<td5<N×tck”, the parallelism is required tobecome N or higher.

Note that a so-called registered DIMM, in which the register and the PLLare mounted on the memory module and the C/A signals are distributed toeach memory through the register and the clock signals are distributedto each memory through the PLL, has been described in the presentinvention. However, needless to say, the present invention can also beimplemented in a so-called un-buffered DIMM, which has no register andPLL and in which the C/A signals and the clock signals are directlydistributed in the memory module.

Fifth Embodiment

A fifth embodiment will be described with reference to FIG. 17.

FIG. 17 is a block diagram of a memory module of a fifth embodiment. Onthe DIMM (not shown), a buffer 1700 and several DRAMs 1720 to 1723 aremounted. The DQ and DQS 1703 are exchanged between the buffer 1700 andthe DRAMs, and CLK 1702 and a command/address (C/A) signal 1704 areoutputted from the buffer 1700. The buffer 1700 is configured so as tocontain a portion of functions of the REG. 20, the PLL 30, and the MC 3in FIG. 1. The signals are also exchanged between the buffer 1700 andthe MC (not shown).

In this case, the C/A 1704 is terminated at a termination resistor 1705by utilizing a daisy chain topology similarly to FIG. 1. The CLK 1702and the “DQ, DQS” 1703 are wired using a Point-to-Point topology.

FIG. 18A shows a propagation delay time of each signal from the buffer1700 to each of the DRAMs 1720 to 1723. Since the “CLK, DQ, DQS” arewired using the same Point-to-Point topology, their propagation delaytimes can be matched relatively easily. However, only the C/A 1704 isformed using a daisy chain topology, so that generally speaking, thefarther the DRAM is, the greater propagation delay time it have incomparison with the “CLK, DQ, DQS”.

First, the “CLK, DQ, DQS”, whose propagation delay times can be matchedrelatively easily, will be described. The “CLK, DQS” signals are signalsrepeated by “0101” patterns, while the DQ signal is a signal havingvarious types of patterns. Thus, signal quality is affected by ISI(Inter Symbol Interference), i.e., influence of data pattern dependency.Consequently, if the wiring length of the DQ is set a little shorterthan that of the DQS signal, the setup margin of the DQ with respect tothe DQS can be equal to a hold margin. In the CLK and the DQS, theirrespective wiring lengths may be adjusted.

Then, in the condition of FIG. 18A, the setup margin of the C/A withrespect to the CLK runs short and thus the CLK cannot capture the C/A1704. Therefore, as shown in FIG. 18B, the “CLK, DQ, DQS” must bedelayed. They can be delayed by the following method: first, each wiringlength of the CLK, the DQ, and the DQS is adjusted; in each of theDRAMs, as shown in FIG. 8B, phases of the C/A and the “CLK, DQ, DQS” areexamined, and by returning their information to the buffer 1700, thetiming of “CLK, DQ, DQS” outputted from the buffer 1700 may be changed;or, as shown in FIG. 4, they are delayed inside the DRAMs.

Using this method, the present embodiment can solve the problems of thesetup margin and the hold margin of the DQ with respect to the DQS, andthe problem of the setup margin of the C/A with respect to the CLK, sothat the memory module that is consistent in the timing of both signalscan be implemented.

Sixth Embodiment

A sixth embodiment will be described with reference to FIG. 19.

FIG. 19 is a block diagram of a memory module of a sixth embodiment. Onthe DIMM (not shown), a buffer 1900 and several DRAMs 1720 to 1723 aremounted. A “DQ, DQS” 1904 is exchanged between a memory controller 1901and the DRAMS, and the C/A 1902 and the CLK 1903 are outputted from thememory controller 1901 to the buffer 1900. From the buffer 1900, the CLK1702 and the command/address (C/A) signals 1704 are outputted based onthe C/A 1902 and the CLK 1903 inputted in the buffer 1900.

In this case, the C/A 1704 is wired using a daisy chain topologysimilarly to FIG. 1, and is terminated at the termination resistor 1705.the CLK 1702 and the “DQ, DQS” 1904 are formed into a Point-to-Pointtopology.

FIG. 20A shows a propagation delay time of the CLK signals from thebuffer 1900 to each of the DRAMs 1720 to 1723, and an arrival time ofthe “DQ, DQS” signals to each of the DRAMs. Since the “CLK, DQ, DQS” iswired using the same Point-to-Point topology, the propagation delay timecan be matched relatively easily. Then, the propagation delay time canbe matched easily if the phase relation between the CLK 1903 inputted tothe buffer 1900 and the CLK 1702 outputted from the buffer 1900 in a pinposition of the buffer 1900 is set to variable. However, only the C/A1704 is wired using a daisy chain topology, so that, generally speaking,the farther the DRAM is, the greater propagation delay time it has incomparison with the CLK.

First, the “CLK, DQ, DQS”, whose propagation delay time is matchedrelatively easily, will be described. The “CLK, DQS” signals are signalsrepeated by “0101” patterns, while the DQ signal is a signal havingvarious types of patterns. Therefore, signal quality is affected by ISI(Inter Symbol Interference), i.e., influence of data pattern dependency.Consequently, if the wiring length of the DQ is set a little shorterthan that of the DQS signal, the setup margin and the hold margin of theDQ wit respect to the DQS are made equal to each other. In the CLK andthe DQS, their respective wiring lengths may be adjusted.

Then, in the condition of FIG. 20A, the setup margin of the C/A withrespect to the CLK runs short and thus the CLK cannot capture the C/A1704. Therefore, as shown in FIG. 20B, the “CLK, DQ, DQS” must bedelayed. A method of delaying it is that: first, each wiring length ofthe CLK, the DQ, and the DQS is adjusted; as in FIG. 8, in each of theDRAMs, phases of the C/A and the “CLK, DQS” are examined in each DRAM,and by returning their information to the buffer 1900 and the memorycontroller 1901, and the timing of the “CLK, DQ, DQS” outputted from thebuffer 1900, and the memory controller 1901 is changed; or, as shown inFIG. 4, they are delayed inside the DRAMs.

Using the method, similarly to the fifth embodiment, the presentembodiment can implement the memory module that is consistent in thetiming of both signals.

1. A semiconductor memory module, on which a plurality of semiconductormemory elements each having terminals for data signals, address/controlsignals, and clock signals are mounted, the semiconductor memory modulecomprising: clock signal lines wired so that said clock signals are inphase with the semiconductor memory elements; data signal lines wired tothe semiconductor memory elements so as to have the same length; aregister setting said address/control signals; and an address/commandsignal line wired in a daisy-chain shape to said semiconductor memoryelements from said register, wherein each of said semiconductor memoryelements has a variable delay circuit with respect to saidaddress/control signals or to said clock signals for taking in saidaddress/control signals, and a delay amount of said variable delaycircuit is set so that the sum of said delay amount and a wiring delaytime due to a wiring from said register becomes equal to a wiring delaytime from said register to the farthest one among said semiconductormemory elements, or a delay amount of said variable delay circuit is setso that the sum of said delay amount and arrival timing of said clocksignals to said semiconductor memory elements becomes equal to a wiringdelay time from said register to said semiconductor memory elements. 2.The semiconductor memory module according to claim 1, wherein each ofsaid semiconductor memory element comprises: a clock stabilizing circuitthat, with respect to said clock signals, reduces jitter anddistributes, as a common clock, said clock signals to blocks in saidsemiconductor memory elements, said common clock being set to an inputof a variable delay circuit; and a register provided therein and settinga value for adjusting a delay time of said variable delay time.
 3. Thesemiconductor memory module according to claim 2, wherein a value ofsaid register is set by a boundary scan circuit.
 4. The semiconductormemory module according to claim 3, wherein said boundary scan circuitand a non-volatile semiconductor element for boundary scan circuit areprovided on said semiconductor memory module.
 5. A semiconductor memorymodule, on which a plurality of semiconductor memory elements eachhaving terminals for data signals, address/control signals, and clocksignals are mounted, the semiconductor memory module comprising: twoclock-signal input terminals that said semiconductor memory elementshave; data signal lines wired to said semiconductor memory element so asto have the same length; a register setting said address/controlsignals; an address/command signal line wired in a daisy-chain shape tosaid semiconductor memory elements from said register; one clock signalwiring that is folded and supplies said clock signals to said twoclock-signal input terminals of said semiconductor memory elements; anda clock stabilizing circuit on which said clock signal wiring is wired,wherein the individual clock-signal input terminals of saidsemiconductor memory elements are connected to said clock signal wiringbefore and that after the folding, each of said semiconductor memoryelements has a clock circuit that generates an intermediate phase of theclock signals inputted from said two clock-signal input terminals, saidaddress/control signals being taken in by using the faster clock signalamong the clock signals that reach said two clock-input signalterminals, and a clock phase outputted from said clock stabilizingcircuit is adjusted so as to have the same phase as those of theaddress/control signals outputted from said register at a position of aninput terminal of each of said semiconductor memory elements.
 6. Thesemiconductor memory module according to claim 5, wherein saidaddress/command signal line is wired to said semiconductor memoryelements from said register through a directional coupler.
 7. A memorysystem, on which the plurality of semiconductor memory modules accordingto claim 1 are mounted, the memory system comprising: a memorycontroller controlling said semiconductor memory elements; and socketsfor mounting said semiconductor memory modules, wherein when writteninto said semiconductor memory elements, said data signal lines, saidclock signal lines, and said address/command signal lines are wired sothat said data signals, said clock signals, and said address/controlsignals reach said respective sockets at a equal time and in phase.
 8. Asemiconductor memory module, on which a plurality of semiconductormemory elements each having a terminal for data signals, a terminal foraddress/control signals, and a terminal for clock signals, thesemiconductor memory module comprising: a clock signal line connected tosaid terminal for clock signals and transmitting said clock signals; adata signal line connected to said terminal for data signals andtransmitting said data signals; a register for setting saidaddress/control signals; and an address/control line connected in adaisy-chain shape to said terminal for address/control signals from saidregister and transmitting said address/control signals, wherein each ofsaid semiconductor memory elements has a variable delay circuit fordelaying said address/control signals or said clock signals for takingin said address/control signals, and a delay amount of said variabledelay circuit is set so that the sum of said delay amount and a wiringdelay time due to a wiring from said register depends on a wiring delaytime from said register to the farthest one among said semiconductormemory elements, or a delay amount of said variable delay circuit is setso that the sum of said delay amount and arrival timing of said clocksignals to said semiconductor memory elements depends on a wiring delaytime from said register to said semiconductor memory elements.
 9. Asemiconductor memory module, on which a plurality of semiconductormemory elements each having a terminal for data signals, a terminal foraddress/control signals, and two terminal for clock signals, thesemiconductor memory module comprising: a data signal line connected tosaid terminal for data signals and transmitting said data signals; aregister for setting said address/control signals; an address/commandsignal line connected in a daisy-chain shape to said terminal foraddress/control signals from said register and transmitting saidaddress/control signals; a clock stabilizing circuit stabilizing saidclock signals; and one clock signal wiring that is folded and supplies,to said two terminals for clock signals, said clock signals outputtedfrom said clock stabilizing circuit, wherein each of said terminals forclock signals is connected to said clock signal wiring before thefolding and that after the folding, each of said semiconductor memoryelements has a clock circuit that generates a phase between the clocksignals inputted from said two terminals for clock signals, saidsemiconductor memory elements take in said address/control signals byusing the faster clock signal among said clock signals that reach saidtwo terminals for clock signals, and said clock stabilizing circuitadjusts phases of said clock signals in accordance with phases of saidaddress/control signals outputted from said register at locations ofsaid terminals for clock signals.
 10. A circuit comprising the functionsof: converting first signals synchronized with a first clock having afirst frequency and a first phase, into a group of signals having asecond frequency lower than said first frequency; sampling said group ofsignals by using a dividing clock of a second clock having the firstfrequency and a second phase; and re-synchronizing said first signalswith said second clock, by generating a second signal of the firstfrequency that has the same pattern as that of one of said firstsignals.
 11. A semiconductor device incorporating the circuit accordingto claim 10, comprising the functions of: inputting a first clocksignal, a second clock signal, and a signal synchronized with saidsecond clock from the outside; and re-synchronizing, with said firstclock, the signal synchronized with said second clock by said circuitaccording to claim
 10. 12. A semiconductor memory module incorporatingthe circuit according to claim 10 and distributing C/A signals and clocksignals obtained from a memory controller to a memory located on amemory module, the semiconductor memory module comprising: a group offirst clock signal wirings distributed to each memory in phase; andsecond clock signals wired in a daisy-chain shaped to said memory, andthe C/A signals synchronized with said second clock, wherein the memory,re-synchronizing said C/A signals with said first clock by said circuitaccording to claim 10, is mounted.
 13. A DIMM, on which a buffer and aplurality of DRAMs are mounted and which exchanges data between saidbuffer and said DRAMs, wherein said data and strobe signals catchingsaid data constitute a Point-to-Point topology between said buffer andsaid DRAMs, and a length of a strobe signal wiring that transmits saidstrobe signals is larger than a data wiring that transmits said datafrom said buffer to said DRAMs.
 14. The DIMM according to claim 13,wherein the length of the strobe signal wiring that transmits saidstrobe signals is a few millimeters as large as the data wiring thattransmits said data from said buffer to the farthest DRAM among saidplurality of DRAMs.
 15. A DIMM, on which a buffer and a plurality ofDRAMs are mounted and which exchanges data between said buffer and saidDRAMs, wherein the C/A signals are supplied in a daisy-chain topology toeach of the DRAMs from said buffer, and each arrival time of the CLK,the data, and the strobe signals outputted from said buffer is adjusteddepending on an arrival time of said C/A signal to said each of theDRAMs.
 16. The DIMM according to claim 15, wherein each arrival time ofthe CLK, the data, and the strobe signals outputted from said buffer isadjusted so as to matche the arrival time of said C/A signal to saidrespective DRAMs.
 17. The DIMM according to claim 15, wherein, byadjusting each wiring length of the CLK, the data, and the strobesignals outputted from said buffer, each arrival time of the CLK, thedata, and the strobe signals outputted from said buffer to the DRAMs isadjusted.
 18. The DIMM according to claim 15, wherein each of said DRAMsexamines phases of said C/A signals, said CLK signals, and said strobesignals, returns information on the examination to said buffer, andadjusts the outputted timing of the CLK, the data, and the strobesignals outputted from said buffer, and thereby adjusts each arrivaltime of the CLK, the data, and the strobe signals outputted from saidbuffer to the respective DRAMs.
 19. The DIMM according to claim 15,wherein said respective DRAMs are such that: phases of said C/A signals,said CLK signals, and said strobe signals are examinee; each arrivaltime of the CLK, the data, and the strobe signals outputted from saidbuffer to the respective DRAMs is delayed by said respective DRAMs inaccordance with examination information; and thereby each arrival timeof the CLK, the data, and the strobe signals outputted from said bufferto said respective DRAMs is adjusted.
 20. A memory system, which mountsa buffer and a plurality of DRAMs on a DIMM and supplies, from saidbuffer to said DRAM, second C/A signals and a second CLK based on firstC/A signals and a first CLK supplied from a memory controller andexchanges data between said memory controller and said DRAMs, whereinsaid data and strobe signals that catch the data constitute aPoint-to-Point topology between said memory controller and said DRAMs,and a length of a strobe signal wiring that transmits said strobesignals is larger than that of the data wiring that transmits said datafrom said buffer to said DRAMs.
 21. The memory system according to claim20, wherein the length of the strobe signal wiring that transmits saidstrobe signals is a few millimeters as large as that of a data wiringthat transmits said data from said buffer to the farthest DRAM amongsaid plurality of DRAMs.
 22. A memory system, which mounts a buffer anda plurality of DRAMs on a DIMM and supplies, from said buffer to saidDRAM, second C/A signals and a second CLK based on first C/A signals anda first CLK supplied from a memory controller and exchanges data betweensaid memory controller and said DRAMs, wherein said second C/A signalsare supplied in a daisy chain topology from said buffer to each DRAM,and in accordance with each arrival time of said second C/A signals tosaid respective DRAMs, each arrival time of said second CLK outputtedfrom said buffer, data outputted from said memory controller, and thearrival time of the strobe signals that catch said data are adjusted.23. The memory system according to claim 22, wherein the arrival time ofthe second CLK outputted from said buffer, the data outputted from saidmemory controller, and each arrival time of the strobe signals areadjusted so as to match the arrival time of said second C/A signals tosaid respective DRAMs.
 24. The memory system according to claim 22,wherein each arrival time of the second CLK outputted from said buffer,the data outputted from said memory controller, and the strobe signalsto the respective DRAMs is adjusted by adjusting the wiring length ofthe second CLK outputted from said buffer, the data outputted from saidmemory controller, and the wiring length of the strobe signals.
 25. Thememory system according to claim 22, wherein said respective DRAMs aresuch that: phases of said second C/A signals, said second CLK, and saidstrobe signals are adjusted; examination information is returned to saidbuffer and said memory controller; the second CLK outputted from saidbuffer, the data outputted from said memory controller, and the outputtiming of the strobe signals are adjusted; and thereby each arrival timeof the second CLK outputted from said buffer, the data outputted fromsaid memory controller, the strobe signals to respective DRAMs isadjusted.
 26. The memory system according to claim 22, wherein saidrespective DRAMs are such that: phases of said second C/A signals, saidsecond CLK, and said strobe signals are examined; based on examinationinformation, the second CLK outputted from said buffer, the dataoutputted from the said memory controller, and the strobe signals aredelayed; and thereby each arrival time of the second CLK outputted fromsaid buffer, the data outputted from said memory controller, and thestrobe signals to the respective DRAMs is adjusted.